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SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
ISSUE 3 - FEBRUARY 1996 7 C BCX54-16 - BD BCX55-16 - BM BCX56-16 - BL PARTMARKING DETAILS:BCX54 - BA BCX54-10 - BC BCX55 - BE BCX55-10 - BG BCX56 - BH BCX56-10 - BK COMPLEMENTARY TYPES:BCX54 - BCX51 BCX55 - BCX52
BCX54 BCX55 BCX56
E C BCX56 - BCX53 B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C SYMBOL VCBO VCEO VEBO ICM IC Ptot BCX54 45 45 BCX55 60 60 5 2 1 1 -65 to +150 BCX56 100 80 UNIT V V V A A W C
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage BCX54 BCX55 BCX56 BCX54 BCX55 BCX56 SYMBOL V(BR)CBO MIN. TYP. MAX. UNIT CONDITIONS. 45 60 100 45 60 80 5 0.1 20 20 0.5 1.0 25 40 25 63 100 150 15 250 160 250
V
IC =100A
V(BR)CEO
V V A A nA V V
IC =10mA* IE =10A VCB =30V VCB =30V, Tamb =150C VEB =4V IC =500mA, IB =50mA* IC =500mA, VCE =2V* IC =5mA, VCE =2V* IC =150mA, VCE =2V* IC =500mA, VCE =2V* IC =150mA, VCE =2V* IC =150mA, VCE =2V*
Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current
V(BR)EBO ICBO IEBO VBE(on) hFE -10 -16
Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio
Transition Frequency Output Capacitance
fT Cobo
MHz IC =50mA, VCE =10V, f=100MHz pF VCB =10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
3 - 35

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